MOCVD
Growth
facilities
CIP
offers state of the art growth of III/V planar wafers using
either MOVPE or MBE, and MOVPE overgrowth to produce complex
three dimensional
device structures including buried heterostructure geometries.The
integrated
nature of the facility enables epitaxial planar growth, device
definition, overgrowth and subsequent processing under one roof
to produce fully fabricated and tested chips, for R&D or
pilot production.The Centre has four
MOVPE systems including a state-of-the-art 8 wafer Aixtron 2400G3,
and one gas source MBE kit. Comprehensive in-house characterisation
techniques include double crystal x-ray diffraction, room temperature
PL, carrier concentration profiling and high resolution SEM.
Experience
Scientists
at CIP were influential in the early development of the MOVPE
and MBE growth techniques and have many years experience in
developing innovative solutions for R&D and pilot production
of photonic devices.
Capabilities
- Highly
uniform growth of very high quality multi-quantum well
structures over multiple wafers with excellent repeatability.
- Overgrowth
to form high reliability buried heterostructures, including
high efficiency current blocking structures, optimised
low resistance contact structures and overgrowth of nanometre
scale gratings.
- High
efficiency butt joining of active and passive devices for
horizontal integration.
- In-situ
etching of structures in the MOVPE reactor prior to overgrowth.
CIP
engineers have extensive experience of the successful transfer
of epitaxial growth and overgrowth processes to industrial
partners.
CIP
can also offer a comprehensive III-V device fabrication and
design service (see associated data sheets).
Summary
of Facilities
- Four
MOVPE systems, including one Aixtron 2400G3 with multi (8x2")
wafer capacity and three horizontal reactor systems with
1x2" wafer capacity
- One
gas source MBE system with 1x2" wafer capacity
- Double
crystal x-ray diffraction with automatic wafer mapping and
modelling
- Room
temperature photoluminescence with fully automated rapid
wafer mapping
- High
resolution spectrophotometer for band edge measurement
- Electrochemical
carrier concentration profiling
- Hall
mobility and carrier concentration measurement
- Nanometre
resolution scanning electron microscope High resolution surface
profilometers
- Imaging
interferometer for surface profiling
- Extensive
in-house knowledge of a range of analysis techniques including
secondary ion mass spectrometry, low temperature photoluminescence
and transmission electron microscopy allowing effective intelligent
interaction with groups providing such services
A
PDF version of this Data Sheet is available below (Approx
180kB)
 MOCVD
PDF
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