1300nm Intermediate Reach 40G-IR-EAM-1300 The 40G-IR-EAM-1300 electroabsorption modulator provides high speed external optical modulation at 40Gbit/s across the 1300nm wavelength band, and is intended for use with a CW laser diode source. More...

1550nm Short Reach 40G-SR-EAM-1550 The 40G-SR-EAM-1550 electroabsorption modulator provides high speed external optical modulation at speeds of 40Gbit/s. The device operates across the 1550nm C-Band with low dispersion penalty, and is intended for use with a CW laser diode source. More...

1550nm Long Reach 10G-LR-EAM-1550 The 10G-LR-EAM-1550 electroabsorption modulator provides high speed external optical modulation at 10Gbit/s. The device operates across the 1550nm C-Band with low (<2dB) dispersion penalty over 80Km of single mode fibre, and is intended for use with a CW laser diode source. More...

R-EAM-1550 Reflective EAM The R-EAM electro absorption modulator provides high speed external optical modulation at 10Gbit/s and RF modulation to 20 GHz. The device operates across the 1550nm C-Band with low dispersion penalty. It relies on the electro absorption effect and is intended for use with a continuous wave laser diode source. EAM devices offer a compact, low drive voltage solution to optical modulation requirements and may be implemented where space requirements are at a premium. The reflective EAM is provided in a RF connectorised package suitable for use in the lab with external RF components and drivers. It is generally intended for use with the Angled Polished Connectors (APC). More...

Features

• 1.55μm C-band operation
• High optical output power
• Available as packaged device or chip-on-carrier
• Customer defined specifications available
• Buried heterostructure InP structure
• Low polarisation sensitivity
• Low insertion loss
• Low drive voltage
R-EAM-1550

Applications

• Radio on fibre / antenna remoting
• Fibre access networks including PONs
• 10Gbit/s links

R-EAM-1550-LS Reflective EAM The R-EAM-1550-LS is designed for 1.55μm C-band operation and features low polarisation sensitivity, low insertion loss, low drive voltage, low dispersion penalty at 10 Gbit/s over 80 km and low TEC power consumption. It is an InP device and features a high speed SMA connector in a hermetic 7 pin butterfly package. It can also function as a photodiode in duplex fibre-optic links. More...

Features

• 1.55μm C-band operation
• Available in 7 pin Butterfly package with SMA connector
• Low polarisation sensitivity
• Low insertion loss
• Low drive voltage
• Low dispersion penalty over 80km
• Low power consumption

Applications

• Radio on fibre / antenna remoting
• Remote sensing transducer
• Fibre access networks including PONs
• 10Gbit/s links

10GHz Optical Sampling 10G-PS-EAM-1550 The 10G-PS-EAM-1550 is a high-speed, semiconductor device capable of generating <25ps (FWHM) temporal optical sampling windows with a repetition rate up to 10GHz. The device operates over the 1.55µm wavelength C-Band. Applications include optical pulse generation (up to 10GHz rates), 40Gbit/s to 10Gbit/s optical demultiplexing, high-speed optical sampling and microwave to optical conversion. More...

40GHz Optical Sampling 40G-PS-EAM-1550 The 40G-PS-EAM-1550 is a high-speed, semiconductor device capable of generating <5ps (FWHM) temporal optical sampling windows with a repetition rate up to 40GHz. The device operates over the 1.55µm wavelength C-Band. Applications include optical pulse generation (up to 40GHz rates), 160Gbit/s to 40Gbit/s optical demultiplexing, high-speed optical sampling and microwave to optical conversion. More...